Numerical indicator field emission display using carbon nanotubes as emitters
Identifieur interne : 010216 ( Main/Repository ); précédent : 010215; suivant : 010217Numerical indicator field emission display using carbon nanotubes as emitters
Auteurs : RBID : Pascal:01-0251314Descripteurs français
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Abstract
A field emission display using carbon nanotubes (CNTs) as emitters is demonstrated. The CNTs, synthesized by arc discharge, were screen printed on glass to serve as the cold cathode. The anode plate, which was indium-tin-oxide coated glass printed with P15 phosphor, was separated from the cathode using 110 μm spacers. The diode structure possesses marvelous field emission properties, including low turn-on voltage (250 V), large emission current density (2.6 mA/cm2 under 450 V) and high brightness (2500 nits). A numerical indicator with 15 pixels, driven by metal-oxide-semiconductor field effect transistors using a gate voltage of 5 V for controlling the on/off of each pixel, illustrates the capability of data addressing. © 2001 American Vacuum Society.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Numerical indicator field emission display using carbon nanotubes as emitters</title><author><name sortKey="Kwo, Jon Lian" uniqKey="Kwo J">Jon-Lian Kwo</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">République de Chine (Taïwan)</country><wicri:regionArea>Department of Electrical Engineering, National Cheng Kung University, Tainan 701</wicri:regionArea><wicri:noRegion>Tainan 701</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Materials Science Center, National Tsing-Hua University, Hsinchu 300, Taiwan</s1></inist:fA14><country xml:lang="fr">République de Chine (Taïwan)</country><wicri:regionArea>Materials Science Center, National Tsing-Hua University, Hsinchu 300</wicri:regionArea><wicri:noRegion>Hsinchu 300</wicri:noRegion></affiliation></author><author><name sortKey="Yokoyama, Meiso" uniqKey="Yokoyama M">Meiso Yokoyama</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">République de Chine (Taïwan)</country><wicri:regionArea>Department of Electrical Engineering, National Cheng Kung University, Tainan 701</wicri:regionArea><wicri:noRegion>Tainan 701</wicri:noRegion></affiliation></author><author><name sortKey="Lee, Cheng Chung" uniqKey="Lee C">Cheng-Chung Lee</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Electronic Research and Service Organization, ITRI, Hsinchu 300, Taiwan</s1><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">République de Chine (Taïwan)</country><wicri:regionArea>Electronic Research and Service Organization, ITRI, Hsinchu 300</wicri:regionArea><wicri:noRegion>Hsinchu 300</wicri:noRegion></affiliation></author><author><name sortKey="Chuang, Feng Yu" uniqKey="Chuang F">Feng-Yu Chuang</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Electronic Research and Service Organization, ITRI, Hsinchu 300, Taiwan</s1><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">République de Chine (Taïwan)</country><wicri:regionArea>Electronic Research and Service Organization, ITRI, Hsinchu 300</wicri:regionArea><wicri:noRegion>Hsinchu 300</wicri:noRegion></affiliation></author><author><name sortKey="Lin, I Nan" uniqKey="Lin I">I-Nan Lin</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">République de Chine (Taïwan)</country><wicri:regionArea>Department of Electrical Engineering, National Cheng Kung University, Tainan 701</wicri:regionArea><wicri:noRegion>Tainan 701</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">01-0251314</idno><date when="2001-05">2001-05</date><idno type="stanalyst">PASCAL 01-0251314 AIP</idno><idno type="RBID">Pascal:01-0251314</idno><idno type="wicri:Area/Main/Corpus">011123</idno><idno type="wicri:Area/Main/Repository">010216</idno></publicationStmt><seriesStmt><idno type="ISSN">1071-1023</idno><title level="j" type="abbreviated">J. vac. sci. technol., B., Microelectron. nanometer struct. process. meas. phenom.</title><title level="j" type="main">Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Cathodes</term><term>Diodes</term><term>Experimental study</term><term>Indicators</term><term>carbon nanotubes</term><term>field emission displays</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>8545F</term><term>8535K</term><term>Etude expérimentale</term><term>Indicateur</term><term>Cathode</term><term>Diode</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">A field emission display using carbon nanotubes (CNTs) as emitters is demonstrated. The CNTs, synthesized by arc discharge, were screen printed on glass to serve as the cold cathode. The anode plate, which was indium-tin-oxide coated glass printed with P15 phosphor, was separated from the cathode using 110 μm spacers. The diode structure possesses marvelous field emission properties, including low turn-on voltage (250 V), large emission current density (2.6 mA/cm2 under 450 V) and high brightness (2500 nits). A numerical indicator with 15 pixels, driven by metal-oxide-semiconductor field effect transistors using a gate voltage of 5 V for controlling the on/off of each pixel, illustrates the capability of data addressing. © 2001 American Vacuum Society.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1071-1023</s0></fA01><fA02 i1="01"><s0>JVTBD9</s0></fA02><fA03 i2="1"><s0>J. vac. sci. technol., B., Microelectron. nanometer struct. process. meas. phenom.</s0></fA03><fA05><s2>19</s2></fA05><fA06><s2>3</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Numerical indicator field emission display using carbon nanotubes as emitters</s1></fA08><fA11 i1="01" i2="1"><s1>KWO (Jon-Lian)</s1></fA11><fA11 i1="02" i2="1"><s1>YOKOYAMA (Meiso)</s1></fA11><fA11 i1="03" i2="1"><s1>LEE (Cheng-Chung)</s1></fA11><fA11 i1="04" i2="1"><s1>CHUANG (Feng-Yu)</s1></fA11><fA11 i1="05" i2="1"><s1>LIN (I-Nan)</s1></fA11><fA14 i1="01"><s1>Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>5 aut.</sZ></fA14><fA14 i1="02"><s1>Electronic Research and Service Organization, ITRI, Hsinchu 300, Taiwan</s1><sZ>3 aut.</sZ><sZ>4 aut.</sZ></fA14><fA14 i1="03"><s1>Materials Science Center, National Tsing-Hua University, Hsinchu 300, Taiwan</s1></fA14><fA20><s1>1023-1025</s1></fA20><fA21><s1>2001-05</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>11992 B</s2></fA43><fA44><s0>8100</s0><s1>© 2001 American Institute of Physics. 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